SAP hard masks are used in demanding fluorine plasma etch applications where deep vias or trenches with very high aspect ratios are required (TSV, MEMS etc.). Currently, two products – SAP 100 and SAP 110 –are offered to our clients. The two products offer different options depending on cure, dry etch chemistry and wet etch bench availability. SAP products has been demonstrated to achieve up to 1:10000 etch selectivities.
The short processing times enables significant savings in cost of ownership. The third product, SAP 120, which can itself be patterned by photolithography is under development.
Parameter | SAP 100 | SAP 110 |
Wafer pretreatment |
None | None |
Cure |
200°C/1min hot plate | 300°C/1min hot plate |
Hard mask opening |
BCl3/Cl2 plasma or Al wet etcher | BCl3/Cl2 plasma or Dilute HF |
Stripping |
Al wet etcher | Dilute HF |
Film Thickness |
60nm | 110nm |
Etch selectivity to Si (Bosch DRIE) |
1:3500 -10000* | 1:1000 – 3000* |
*Selectivity is a function of etch parameters and cure temperature